| PART |
Description |
Maker |
| BTS725-L1 BTS725-L1E3240 |
2 Channel PROFET Smart High Side Powe...
|
Infineon
|
| MRF5S21130SR3 MRF5S21130 MRF5S21130R3 MRF5S21130S |
MRF5S21130, MRF5S21130R3, MRF5S21130S, MRF5S21130SR3 2170 MHz, 28 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs
|
MOTOROLA[Motorola, Inc]
|
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| MRF5P21240R6 MRF5P21240 |
RF POWER FIELD EFFECT TRANSISTOR 2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
MRF5P21240R6 2170 MHz, 52 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
2170 MHz, 52 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
Freescale (Motorola)
|
| 2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification
Silicon N-Channel Power F-MOS FET
|
Panasonic Semiconductor
http://
|
| AGR21010E |
N-Channel E-Mode Lateral MOSFET
|
Agere Systems
|
| AFT09S200W02N AFT09S200W02GNR3 AFT09S200W02NR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| AFT09S200W02S AFT09S200W02SR3 |
N-Channel Enhancement-Mode Lateral MOSFET
|
NXP Semiconductors
|
| ATC600B121BT250XT ATC600B200BT250XT ATC600B270BT25 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
| MRF3010 |
LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
|
MOTOROLA[Motorola, Inc]
|
| SME63V471M12X25LL 200B203MW50B 1812SMS-39N MRF5S41 |
N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
